BSS8402DW-7-F parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ BSS8402DW-7-F

The pictures are for reference only

Brand:

Diodes

Model:

BSS8402DW-7-F

Description:

MOSFET N/P-CH 60V/50V SC70-6

Stock:

9642

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.1

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

115mA,130mA

Drain source voltage (Vdss)

60V,50V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

50pF @ 25V

On resistance (maximum) for different Ids and Vgs

7.5 Ω @ 50mA,5V

Power - maximum

200mW

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

BSS8402DW-7-F（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9642,Price reference "real-time change" China/Hongkong。 BSS8402DW-7-F package/specs, Download BSS8402DW-7-F、Datasheet。